Advanced Gate Technologies for State-of-the-art f[subscript T] in AlGaN/GaN HEMTs
نویسندگان
چکیده
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electron mobility transistors (HEMTs) has been attributed to a significant drop of the intrinsic small-signal transconductance (gm) with respect to the intrinsic DC gm. To reduce this gmcollapse and improve high frequency performance, we have developed a new technology based on a combination of vertical gate-recess, oxygen plasma treatment, and lateral gate-etch which has allowed us to fabricate AlGaN/GaN HEMTs with a record current-gain cutoff frequency (fT) of 225 GHz for a gate length (Lg) of 55 nm, and 162 GHz for an Lg of 110 nm.
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